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High hFE LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 100 50 15 10 3 35(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
2SC4024
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
(Ta=25C) Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ V MHz pF
13.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=100V VEB=15V IC=25mA VCE=4V, IC=1A IC=5A, IB=0.1A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
A
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) -0.1 ton (s) 0.5typ tstg (s) 2.0typ tf (s) 0.5typ
2.54
3.9 BCE
IC - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t)( V ) 10
IB=3 5mA
V CE ( sat ) - IB Characteristics (Typical)
1.5
I C - VBE Temperature Characteristics (Typical)
10 (V CE= 4V)
Collector Current I C (A)
25mA
6
20m A
15mA 10mA
1.0
Collector Current I C( A)
8
30mA
8
6
) mp
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Part No. b. Lot No.
emp se T (Ca
)
C
25C
5mA
125
2
5A
3A
IC = 1 A
2
0
0
2
4
6
0 0.002
0.01
0.1 Base Current I B( A)
1
2
0
0
-30C
(Cas
10A
(Ca
0.5
e Te
4
se
4
mp)
Te
0.5
1.0
1.2
Collector-Emitter Voltage V C E( V)
Base-Emittor Voltage V B E( V)
(VCE=4V) 1000 DC C urrent G ain h FE 1000 DC C urrent G ain h FE
1 2 5 C
(VCE=4V)
j- a( C/W)
Transient Thermal Resistance
hFE - I C Characteristics (Typical)
h FE - IC Temperature Characteristics (Typical)
j-a - t Characteristics
4
Typ
500
500
25C
-30
C
1
0.5 0.3
100 0.02
0.1
0.5
1
5
10
100 0.02
0.1
0.5
1
5
10
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 30 30
Safe Operating Area (Single Pulse)
40
1m s
P c - T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30
10
Cut- off Fr equ ency f T( MH Z)
10 Co lle ctor Cu rre nt I C( A) 20
m
10
s
0m
s
5
DC
Maxim um Power Dissi pation P C( W)
Typ
W ith In
20
fin ite he at
10
1 Without Heatsink Natural Cooling
150x150x2 10 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75
si nk
0.5
0 -0.05 -0.1
0.2 -0.5 -1 -5 -10 3 5 10 50 100 Emitter Current I E( A) Collector-Emitter Voltage V C E( V)
100
125
150
Ambient Temperature Ta(C)
85

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